Silicon carbide CoolSiC™ MOSFETs

Silicon carbide CoolSiC™ MOSFETs solutions are the next essential step towards an energy-smart world

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Introduction to CoolSiC™ MOSFETs

Based on volume experience and compatibility know-how, we introduced the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC power MOSFET offers a series of advantages. SiC CoolSiC™ MOSFET technology represents the best performance, reliability, and ease of use for system designers. SiC power transistors open up new degrees of flexibility for designers to harness never-before-seen levels of efficiency and reliability. High-voltage CoolSiC™ MOSFET technology has also provided impressive improvements in reverse recovery characteristics.

CoolSiC™ MOSFETs from Infineon provide high efficiency and optimal reliability. Our range of products is available in discrete housing as well as modules in 650 V, 1200 V, 1700 V, and 2000 V voltage classes. The SiC MOSFET power modules come in three-level, fourpack, half-bridge, sixpack, and booster configurations.

Highlights of the CoolSiC™ MOSFETs

CoolSiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature-independent low switching losses, and threshold-free on-state characteristics. Infineon’s unique CoolSiC™ MOSFET adds additional advantages:

Superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), a threshold voltage Vth of 4 V, and short-circuit robustness. This is the revolution you can rely on. All this results in a robust SiC MOSFET technology, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy-to-use drivers. Delivering the highest level efficiency at high switching frequencies allowing for system size reduction, power density increases, and high lifetime reliability.

Benefits, features, and applications

The CoolSiC™ MOSFETs offer the highest efficiency for reduced cooling effort, a longer lifetime, and higher reliability. They also provide higher frequency operation, a reduction in system cost, increased power density, a reduced system complexity, as well as the ease of design and implementation.

The key benefits are the low device capacitances, temperature-independent switching losses, intrinsic diode with low reverse recovery charge, and threshold-free on-state characteristics. The CoolSiC™ MOSFETs can be used in several applications, for example, photovoltaic inverters, battery charging and formation, server and telecom power, servo and motor drives, energy storage and UPS, industrial SMPs, and auxiliary power supplies.

CoolSiC™ MOSFET in discrete and module housings

The TO-247 4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247 3pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and a robust design, as well as PressFIT connections. While low-power ranges can be ideally addressed with the Easy family, medium-power inverters of 250+ kW can best make use of the 62 mm package. The HybridPACK™ Drive CoolSiC™ MOSFETs are AQG-324 qualified and optimized for high-power automotive traction inverters of 180+ kW. It is an easy-to-mount sixpack module for direct water cooling with a pin-fin baseplate and supports an efficient and high-volume-optimized assembly process.

CIPOS™ Maxi IPM with CoolSiC™ MOSFET

The CoolSiC™ MOSFET-based CIPOS™ Maxi IPM IM828 series is the world’s first 1200 V transfer molded silicon carbide IPM which integrated an optimized six-channel 1200 V SOI gate driver and six CoolSiC™ MOSFETs. The smallest and most compact package in the 1200 V class, IM828-XCC combines a power rating in excess of 4.8 kW with exceptional power density, reliability, and performance.

More about IM828-XCC
Gate driver ICs for CoolSiC™ MOSFETs

Ultra-fast-switching power transistors such as CoolSiC™ MOSFETs can be easier when handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as the most suitable.

More about gate driver ICs

Introduction to CoolSiC™ MOSFETs

Based on volume experience and compatibility know-how, we introduced the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC power MOSFET offers a series of advantages. SiC CoolSiC™ MOSFET technology represents the best performance, reliability, and ease of use for system designers. SiC power transistors open up new degrees of flexibility for designers to harness never-before-seen levels of efficiency and reliability. High-voltage CoolSiC™ MOSFET technology has also provided impressive improvements in reverse recovery characteristics.

CoolSiC™ MOSFETs from Infineon provide high efficiency and optimal reliability. Our range of products is available in discrete housing as well as modules in 650 V, 1200 V, 1700 V, and 2000 V voltage classes. The SiC MOSFET power modules come in three-level, fourpack, half-bridge, sixpack, and booster configurations.

Highlights of the CoolSiC™ MOSFETs

CoolSiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature-independent low switching losses, and threshold-free on-state characteristics. Infineon’s unique CoolSiC™ MOSFET adds additional advantages:

Superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), a threshold voltage Vth of 4 V, and short-circuit robustness. This is the revolution you can rely on. All this results in a robust SiC MOSFET technology, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy-to-use drivers. Delivering the highest level efficiency at high switching frequencies allowing for system size reduction, power density increases, and high lifetime reliability.

Benefits, features, and applications

The CoolSiC™ MOSFETs offer the highest efficiency for reduced cooling effort, a longer lifetime, and higher reliability. They also provide higher frequency operation, a reduction in system cost, increased power density, a reduced system complexity, as well as the ease of design and implementation.

The key benefits are the low device capacitances, temperature-independent switching losses, intrinsic diode with low reverse recovery charge, and threshold-free on-state characteristics. The CoolSiC™ MOSFETs can be used in several applications, for example, photovoltaic inverters, battery charging and formation, server and telecom power, servo and motor drives, energy storage and UPS, industrial SMPs, and auxiliary power supplies.

CoolSiC™ MOSFET in discrete and module housings

The TO-247 4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247 3pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and a robust design, as well as PressFIT connections. While low-power ranges can be ideally addressed with the Easy family, medium-power inverters of 250+ kW can best make use of the 62 mm package. The HybridPACK™ Drive CoolSiC™ MOSFETs are AQG-324 qualified and optimized for high-power automotive traction inverters of 180+ kW. It is an easy-to-mount sixpack module for direct water cooling with a pin-fin baseplate and supports an efficient and high-volume-optimized assembly process.

CIPOS™ Maxi IPM with CoolSiC™ MOSFET

The CoolSiC™ MOSFET-based CIPOS™ Maxi IPM IM828 series is the world’s first 1200 V transfer molded silicon carbide IPM which integrated an optimized six-channel 1200 V SOI gate driver and six CoolSiC™ MOSFETs. The smallest and most compact package in the 1200 V class, IM828-XCC combines a power rating in excess of 4.8 kW with exceptional power density, reliability, and performance.

More about IM828-XCC

Gate driver ICs for CoolSiC™ MOSFETs

Ultra-fast-switching power transistors such as CoolSiC™ MOSFETs can be easier when handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as the most suitable.

More about gate driver ICs

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