IGBT press packs

Extreme energy. Ultimate run.

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Overview

We offer a high-power product portfolio with a new direct press pack IGBT using Infineon's trench 4.5 kV IGBT chips: Infineon's Prime Switch.

Key Features

  • Low loss by 4.5 kV trench IGBT chip
  • Full long-term short-on-fail
  • Highest power cycling capability
  • Hermetically sealed housing

Products

About

The application-optimized press pack IGBTs offer 2000 A with and 3000 A without internal freewheeling diode. With the rising demand for higher power densities and robust system control, the need for using press pack IGBT (PPI) devices in medium voltage (MV) applications is also increasing. The same is valid for new high-power VSC-HVDC systems based on MMC topologies. Multilevel modulation converters (MMCs) are eager for compact design, especially for offshore VSC-HVDC systems. The saving space and weight could reduce the cost of the whole system. Our press pack IGBTs are the perfect fit for the sub-module design of MMC. The PPI-housing is hermetically sealed and specially designed to withstand failure events caused by the system: The PPI offers “short-on-fail” feature and an extremely robust case non rupture performance. 

IGBT chip with a trench gate structure is designed to reduce the conduction losses with negligible influences on the tail current and turn-off losses. It has been proven as an effective solution to minimize the saturation voltage of IGBT chip. Another point, field stop technology is used to reduce the thickness of silicon for lower conduction resistance and higher blocking voltage, which also reduces the tail current and lowers the turn-off loss slightly. The IGBTs with trench gate and field stop technology have been in commercial production for many years already. For the latest innovative 4.5 kV trench IGBT chip technology is adopted. The same chip technology is also used in the latest IGBT module generation, for a long period successfully.

As the IGBT press packs (PPI) and freewheeling diodes (FWDs) are separated into two housings, the power stack consists of 2 PPIs and 2 FWDs for a halfbridge submodule, and 4 PPIs and 4 FWDs for a full-bridge submodule accordingly. Designing such a stack with independent PPI and FWD, 4 devices are preferred to assemble into one stack which can also share mechanical accessories, e.g., frames, springs, heatsinks, busbar, etc. It is an advantage when the external FWD can be installed in the same mechanical setup as the PPI. This optimizes the space, weight and cost of the converter valve and simplifies mechanical construction.

The application-optimized press pack IGBTs offer 2000 A with and 3000 A without internal freewheeling diode. With the rising demand for higher power densities and robust system control, the need for using press pack IGBT (PPI) devices in medium voltage (MV) applications is also increasing. The same is valid for new high-power VSC-HVDC systems based on MMC topologies. Multilevel modulation converters (MMCs) are eager for compact design, especially for offshore VSC-HVDC systems. The saving space and weight could reduce the cost of the whole system. Our press pack IGBTs are the perfect fit for the sub-module design of MMC. The PPI-housing is hermetically sealed and specially designed to withstand failure events caused by the system: The PPI offers “short-on-fail” feature and an extremely robust case non rupture performance. 

IGBT chip with a trench gate structure is designed to reduce the conduction losses with negligible influences on the tail current and turn-off losses. It has been proven as an effective solution to minimize the saturation voltage of IGBT chip. Another point, field stop technology is used to reduce the thickness of silicon for lower conduction resistance and higher blocking voltage, which also reduces the tail current and lowers the turn-off loss slightly. The IGBTs with trench gate and field stop technology have been in commercial production for many years already. For the latest innovative 4.5 kV trench IGBT chip technology is adopted. The same chip technology is also used in the latest IGBT module generation, for a long period successfully.

As the IGBT press packs (PPI) and freewheeling diodes (FWDs) are separated into two housings, the power stack consists of 2 PPIs and 2 FWDs for a halfbridge submodule, and 4 PPIs and 4 FWDs for a full-bridge submodule accordingly. Designing such a stack with independent PPI and FWD, 4 devices are preferred to assemble into one stack which can also share mechanical accessories, e.g., frames, springs, heatsinks, busbar, etc. It is an advantage when the external FWD can be installed in the same mechanical setup as the PPI. This optimizes the space, weight and cost of the converter valve and simplifies mechanical construction.

Documents

Developer Community

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