Automotive IGBT discretes

Fully automotive-qualified product portfolio supporting a wide range of automotive applications

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Overview

Designed for hybrid and electric vehicles, Infineon offers an extensive and dedicated range of automotive AEC-Q101-qualified IGBTs. Our portfolio includes 600 V to 1200 V, rated up to 200 A, and from low to ultra-high switching frequencies.

Key Features

  • Benchmark performance & efficiency
  • High power density
  • High reliability
  • Easy assembly
  • Cost-effective devices
  • Enabling scalability
  • Enabling platform approach

Products

About

Infineon's second-generation chip technology for electrical drivetrain

Infineon's second-generation chip technology for electrical drivetrain is a benchmark 750 V IGBT technology that significantly improves the energy efficiency for automotive drivetrain applications. This technology supports DC link voltages up to 470 V and has remarkably low switching and conduction losses. Combined with the outstanding Infineon quality, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility, and power scalability to the final designs.

Products with EDT2 can feature both a higher blocking voltage and 20 percent lower saturation voltage compared to the established IGBT3. The optimization of the cell structure allows the switching with high gradients. Furthermore, the rugged design avoids latch-ups and allows sufficient short-circuit protection.

Infineon's TRENCHSTOP™ 5 Auto technology

Infineon’s TRENCHSTOP™ 5 Auto IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. It is a revolution in the IGBT world to match the market’s highest efficiency demand of tomorrow, which means when the highest efficiency, lower system cost, and increased reliability are required, TRENCHSTOP™ 5 is the only option. It provides a drastic reduction in switching and conduction losses. 

Infineon's TRENCHSTOP™ 60TA technology

Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

RC-drives IGBT technology

RC-drives IGBT technology has been developed by Infineon as a cost-optimized solution by offering space-saving advantages due to a monolithically integrated diode. Furthermore, the technology provides outstanding performance for smooth switching behavior and low EMI levels even at the maximum junction temperature of 175°C.

Infineon's second-generation chip technology for electrical drivetrain

Infineon's second-generation chip technology for electrical drivetrain is a benchmark 750 V IGBT technology that significantly improves the energy efficiency for automotive drivetrain applications. This technology supports DC link voltages up to 470 V and has remarkably low switching and conduction losses. Combined with the outstanding Infineon quality, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility, and power scalability to the final designs.

Products with EDT2 can feature both a higher blocking voltage and 20 percent lower saturation voltage compared to the established IGBT3. The optimization of the cell structure allows the switching with high gradients. Furthermore, the rugged design avoids latch-ups and allows sufficient short-circuit protection.

Infineon's TRENCHSTOP™ 5 Auto technology

Infineon’s TRENCHSTOP™ 5 Auto IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. It is a revolution in the IGBT world to match the market’s highest efficiency demand of tomorrow, which means when the highest efficiency, lower system cost, and increased reliability are required, TRENCHSTOP™ 5 is the only option. It provides a drastic reduction in switching and conduction losses. 

Infineon's TRENCHSTOP™ 60TA technology

Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

RC-drives IGBT technology

RC-drives IGBT technology has been developed by Infineon as a cost-optimized solution by offering space-saving advantages due to a monolithically integrated diode. Furthermore, the technology provides outstanding performance for smooth switching behavior and low EMI levels even at the maximum junction temperature of 175°C.

Documents

Documents

Design resources

Developer community

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