CoolSiC™ Schottky diodes 650 V G5 and G6

High efficiency and price performance

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Overview

Infineon's CoolSiC™ Schottky Diodes 650 V deliver high price-performance ratio, leveraging advanced silicon carbide production facilities, a solid track record, utmost quality, and a very granular product portfolio. The latest product family of CoolSiC™ Schottky diodes 650 V G6, the successor of Generation 5, comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS™ 7 superjunction MOSFET families.

Key Features

  • Lowest VF=1.25 V (G6)
  • Best-in-class (Qc x VF)
  • No reverse recovery charge
  • High dV and dt ruggedness

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About

High efficiency and price performance

With more compact designs and thin wafer technology, CoolSiC™ Schottky diodes Generation 5 and 6 complement our 650 V CoolMOS™ superjunction MOSFET families, satisfying application requirements of 650 V solutions. CoolSiC™ Schottky diodes G5 and G6 convince with better efficiency compared to silicon diode alternatives.

The latest product family of CoolSiC™ Schottky diodes 650 V G6, the successor of Generation 5, comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS™ 7 superjunction MOSFETs families.

Family of products with improved efficiency over all load conditions

The CoolSiC™ Schottky diode 650 V G6 is the leading-edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon-proprietary innovative soldering process is combined with a more compact design, thin wafer technology, and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from the best-in-class figure of merit (Qc x VF). CoolSiC™ G6 diodes complement Infineon’s CoolMOS™ 7 and CoolSiC™ families, meeting the most stringent application requirements in the voltage range up to 650 V.

Improved system efficiency, system power density, and quiet switching

The lowest VF: 1.25 V leads to improved system efficiency over all load conditions for telecom and servers.

Best-in-class figure of merit (Qc x VF) permits increased system power density for solar.

No reverse recovery charge enables reduced cooling requirements and increased system reliability for PC power.

Temperature-independent switching behavior up to 175 degrees facilitates extremely fast switching for lighting, TV, and drives.

High efficiency and price performance

With more compact designs and thin wafer technology, CoolSiC™ Schottky diodes Generation 5 and 6 complement our 650 V CoolMOS™ superjunction MOSFET families, satisfying application requirements of 650 V solutions. CoolSiC™ Schottky diodes G5 and G6 convince with better efficiency compared to silicon diode alternatives.

The latest product family of CoolSiC™ Schottky diodes 650 V G6, the successor of Generation 5, comes with improved system efficiency complementing Infineon’s 600 V and 650 V CoolMOS™ 7 superjunction MOSFETs families.

Family of products with improved efficiency over all load conditions

The CoolSiC™ Schottky diode 650 V G6 is the leading-edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon-proprietary innovative soldering process is combined with a more compact design, thin wafer technology, and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from the best-in-class figure of merit (Qc x VF). CoolSiC™ G6 diodes complement Infineon’s CoolMOS™ 7 and CoolSiC™ families, meeting the most stringent application requirements in the voltage range up to 650 V.

Improved system efficiency, system power density, and quiet switching

The lowest VF: 1.25 V leads to improved system efficiency over all load conditions for telecom and servers.

Best-in-class figure of merit (Qc x VF) permits increased system power density for solar.

No reverse recovery charge enables reduced cooling requirements and increased system reliability for PC power.

Temperature-independent switching behavior up to 175 degrees facilitates extremely fast switching for lighting, TV, and drives.

Documents

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Design resources

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